Title :
The nitrogen incorporated ZrO2 charge trapping layers in nonvolatile memory applications
Author :
Chih Ju Lin ; Ming Ling Lee ; Kow Ming Chang ; Shan Wei Chang ; Hsiang Chen ; Chyuan Haur Kao ; Wei Kung Sung ; Min Hau Kuo ; Che Wei Chang ; Chia Lun Chang ; Chun Fu Lin
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Kwei-Shan, Taiwan
Abstract :
In the study, the MOHOS-type memory using ZrO2 trapping layer with nitrogen incorporation and combined with rapid thermal annealing has been investigated. It can be found that the memory device by nitrogen incorporation annealed at 900°C can improve memory device performance, including larger C-V hysteresis, faster P/E speed, better data retention, and. smaller charge loss about 7.7%.
Keywords :
annealing; hysteresis; nitrogen; random-access storage; zirconium compounds; C-V hysteresis; MOHOS-type memory; N; P-E speed; ZrO2; charge trapping layer; data retention; memory device; nitrogen incorporated zirconium dioxide; nonvolatile memory application; temperature 900 C; thermal annealing; Abstracts; Annealing; Hysteresis; Nitrogen; Thermal conductivity; Three-dimensional displays;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021622
