• DocumentCode
    242394
  • Title

    The nitrogen incorporated ZrO2 charge trapping layers in nonvolatile memory applications

  • Author

    Chih Ju Lin ; Ming Ling Lee ; Kow Ming Chang ; Shan Wei Chang ; Hsiang Chen ; Chyuan Haur Kao ; Wei Kung Sung ; Min Hau Kuo ; Che Wei Chang ; Chia Lun Chang ; Chun Fu Lin

  • Author_Institution
    Dept. of Electron. Eng., Chang Gung Univ., Kwei-Shan, Taiwan
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In the study, the MOHOS-type memory using ZrO2 trapping layer with nitrogen incorporation and combined with rapid thermal annealing has been investigated. It can be found that the memory device by nitrogen incorporation annealed at 900°C can improve memory device performance, including larger C-V hysteresis, faster P/E speed, better data retention, and. smaller charge loss about 7.7%.
  • Keywords
    annealing; hysteresis; nitrogen; random-access storage; zirconium compounds; C-V hysteresis; MOHOS-type memory; N; P-E speed; ZrO2; charge trapping layer; data retention; memory device; nitrogen incorporated zirconium dioxide; nonvolatile memory application; temperature 900 C; thermal annealing; Abstracts; Annealing; Hysteresis; Nitrogen; Thermal conductivity; Three-dimensional displays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021622
  • Filename
    7021622
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=242394