DocumentCode :
242397
Title :
Simulation of FeFET-based basic logic circuits and current sense amplifier
Author :
Ya Qin ; Ying Xiong ; Kai Li ; Minghua Tang
Author_Institution :
Key Lab. of Low Dimensional Mater. & Applic. Technol. of Minist. of Educ., Xiangtan Univ., Xiangtan, China
fYear :
2014
fDate :
28-31 Oct. 2014
Firstpage :
1
Lastpage :
3
Abstract :
The usage of ferroelectric-gate field effect transistors (FeFET) in digital circuits typically involved that of memory applications, but the use of FeFET to implement logic circuits was not completely understood and had not been extensively studied. This paper presented the simulation of electrical properties of a single FeFET and the results of behavioral characterization of FeFET-based basic logic circuits in a commercially available TCAD environment. The all-FeFET CMOS inverter, current mirror, 2-input-NAND and 2-input-NOR logic circuits shown almost the same electrical characteristics as standard MOSFET except for the negligible clockwise hysteresis under the condition of low voltage supply. Moreover, the all-FeFET current mode sensitive amplifier whose component units were all-FeFET common-source amplifier, current mirror and differential amplification, also worked reasonably.
Keywords :
CMOS integrated circuits; NAND circuits; NOR circuits; amplifiers; digital circuits; ferroelectric semiconductors; field effect transistors; technology CAD (electronics); MOSFET; NAND; NOR; TCAD; all-FeFET CMOS inverter; basic logic circuit; behavioral characterization; clockwise hysteresis; common-source amplifier; current mirror; current mode sensitive amplifier; current sense amplifier; differential amplification; digital circuit; ferroelectric-gate field effect transistor; memory application; CMOS integrated circuits; Logic circuits; Logic gates; MOSFET; Mirrors; Nonvolatile memory; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
Type :
conf
DOI :
10.1109/ICSICT.2014.7021624
Filename :
7021624
Link To Document :
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