DocumentCode :
2423983
Title :
Total dose bias dependency and ELDRS effects in bipolar linear devices
Author :
Yui, C.C. ; McClure, S.S. ; Rax, B.G. ; Lehman, J.M. ; Minto, T.D. ; Wiedeman, M.D.
Author_Institution :
Jet Propulsion Lab., Electron. Parts Eng. Office, Pasadena, CA, USA
fYear :
2002
fDate :
2002
Firstpage :
131
Lastpage :
137
Abstract :
Total dose tests of several bipolar linear devices show sensitivity to both dose rate and bias during exposure. All devices exhibited enhanced low dose rate sensitivity (ELDRS). An accelerated ELDRS test method for three different devices demonstrates results similar to tests at low dose rate. Behavior and critical parameters from these tests are compared and discussed.
Keywords :
bipolar analogue integrated circuits; integrated circuit reliability; integrated circuit testing; life testing; radiation effects; ELDRS effects; accelerated ELDRS test method; bias sensitivity; bipolar linear devices; critical test parameters; dose rate sensitivity; enhanced low dose rate sensitivity; total dose bias dependency; total dose tests; Automatic testing; Circuit testing; Electronics packaging; Laboratories; Military aircraft; Propulsion; System testing; Temperature; Transducers; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 2002 IEEE
Print_ISBN :
0-7803-7544-0
Type :
conf
DOI :
10.1109/REDW.2002.1045543
Filename :
1045543
Link To Document :
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