DocumentCode
2424000
Title
Updated responses of devices from the FSG and FSP radiation-hardened power MOSFET families to 1-MeV equivalent neutrons
Author
Gillberg, James E. ; Titus, Jeffrey L. ; Hubbard, Noel ; Burton, Donald I. ; Wheatley, C. Frank
Author_Institution
Fairchild Semicond., Somerville, MA, USA
fYear
2002
fDate
2002
Firstpage
138
Lastpage
144
Abstract
This paper updates our 2001 workshop paper and provides neutron test results of six device types representing the Star Power Gold, FSG, and the Star Power, FSP, radiation-hardened power MOSFET families manufactured by Fairchild Semiconductor. Both the FSG and FSP families employ a stripe-cell topology with devices having rated drain breakdown voltages from 30 volts to 250 volts.
Keywords
neutron effects; power MOSFET; radiation hardening (electronics); semiconductor device breakdown; semiconductor device testing; 30 to 250 V; Star Power FSP power MOSFET; Star Power Gold FSG power MOSFET; neutron responses; neutron test; radiation-hardened power MOSFET; rated drain breakdown voltages; stripe-cell topology; Cranes; Gold; Ionization; MOSFET circuits; Neutrons; Power MOSFET; Radiation hardening; Semiconductor device manufacture; Semiconductor device testing; USA Councils;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2002 IEEE
Print_ISBN
0-7803-7544-0
Type
conf
DOI
10.1109/REDW.2002.1045544
Filename
1045544
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