DocumentCode
242410
Title
Investigation of band-to-band tunneling parameters in sige by using MOSFET GIDL current analysis
Author
Chang Liu ; Wenjie Yu ; Bo Zhang ; Xi Wang ; Qing-Tai Zhao
Author_Institution
State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
fYear
2014
fDate
28-31 Oct. 2014
Firstpage
1
Lastpage
3
Abstract
For better understanding of SiGe tunnel field-effect transistors (TFETs) and its band-to-band tunneling (BTBT) mechanism, gate-induced-drain-leakage (GIDL) of MOSFETs was analyzed. GIDL were measured on Si/SiGe/SOI quantum-well p-MOSFETs. The numerical model of the analysis was elaborated and the critical exponential parameters were successfully extracted for strained SiGe with varying Ge content and strain.
Keywords
Ge-Si alloys; MOSFET; numerical analysis; quantum well devices; semiconductor device models; semiconductor quantum wells; tunnelling; BTBT mechanism; MOSFET GIDL current analysis; Si1-xGex; TFET; band-to-band tunneling parameter; gate-induced-drain-Ieakage; numerical model; quantum-well p-MOSFET; tunnel field-effect transistor; Abstracts; Logic gates; Silicon; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4799-3296-2
Type
conf
DOI
10.1109/ICSICT.2014.7021631
Filename
7021631
Link To Document