Title :
The hetero material gateand hetero-junction tunnel field-effect transistor with pocket
Author :
Zhi Jiang ; Yiqi Zhuang ; Cong Li ; Wang Ping
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´an, China
Abstract :
In this paper, the hetero material gate and hetero-junction tunnel field-effect (HMG HJ-TFET) with pocket was studied. Improvements in the device performance in terms of on-state current were shown. It is found that a good saturation of IDS is observed. The substhreshld swing (SS) performance was improved. The hetero-junction was formed by the SiGe material in source region, the on-state current (ION) was also increased.
Keywords :
junction gate field effect transistors; silicon compounds; tunnel transistors; HMG HJ-TFET; SS performance improvement; SiGe; device performance; heterojunction tunnel field-effect transistor; heteromaterial gate; on-state current; pocket; source region; substhreshld swing performance improvement; Abstracts; Doping; Hafnium compounds; Logic gates; Performance evaluation;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021632
