DocumentCode :
242419
Title :
A novel residual stress test structure for MEMs thin films
Author :
Yichao Zhou ; Zaifa Zhou ; Ninghuan Wang
Author_Institution :
Sch. of Electron. & Eng., Southeast Univ., Nanjing, China
fYear :
2014
fDate :
28-31 Oct. 2014
Firstpage :
1
Lastpage :
3
Abstract :
Residual stress has a great impact on the feature of MEMS thin films, and the structural parameter and manufacturing process of MEMS thin films determine the magnitude of residual stress. Based on the conventional single-cantilever-beam micro-rotating structure, this paper presents a new structure and optimizes the corresponding parameters. The ANSYS software is adopted to conduct finite element analysis. In addition, we figure out the relationship between the new structure´s residual stress and the deflection angle according to elasticity formulas and geometric principles. The analysis demonstrates that the original structure has several advantages in aspects of measuring residual stress such as low deviation, high accuracy and simplified process.
Keywords :
cantilevers; elasticity; finite element analysis; internal stresses; manufacturing processes; micromechanical devices; thin film devices; ANSYS software; MEMS thin film feature; deflection angle; elasticity formulas; finite element analysis; geometric principles; high accuracy process; low deviation process; manufacturing process; residual stress test structure; simplified process; single-cantilever-beam microrotating structure; structural parameter; Abstracts; Films; Gallium arsenide; Manufacturing processes; Micromechanical devices; Residual stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
Type :
conf
DOI :
10.1109/ICSICT.2014.7021635
Filename :
7021635
Link To Document :
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