• DocumentCode
    242419
  • Title

    A novel residual stress test structure for MEMs thin films

  • Author

    Yichao Zhou ; Zaifa Zhou ; Ninghuan Wang

  • Author_Institution
    Sch. of Electron. & Eng., Southeast Univ., Nanjing, China
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Residual stress has a great impact on the feature of MEMS thin films, and the structural parameter and manufacturing process of MEMS thin films determine the magnitude of residual stress. Based on the conventional single-cantilever-beam micro-rotating structure, this paper presents a new structure and optimizes the corresponding parameters. The ANSYS software is adopted to conduct finite element analysis. In addition, we figure out the relationship between the new structure´s residual stress and the deflection angle according to elasticity formulas and geometric principles. The analysis demonstrates that the original structure has several advantages in aspects of measuring residual stress such as low deviation, high accuracy and simplified process.
  • Keywords
    cantilevers; elasticity; finite element analysis; internal stresses; manufacturing processes; micromechanical devices; thin film devices; ANSYS software; MEMS thin film feature; deflection angle; elasticity formulas; finite element analysis; geometric principles; high accuracy process; low deviation process; manufacturing process; residual stress test structure; simplified process; single-cantilever-beam microrotating structure; structural parameter; Abstracts; Films; Gallium arsenide; Manufacturing processes; Micromechanical devices; Residual stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021635
  • Filename
    7021635