DocumentCode
242419
Title
A novel residual stress test structure for MEMs thin films
Author
Yichao Zhou ; Zaifa Zhou ; Ninghuan Wang
Author_Institution
Sch. of Electron. & Eng., Southeast Univ., Nanjing, China
fYear
2014
fDate
28-31 Oct. 2014
Firstpage
1
Lastpage
3
Abstract
Residual stress has a great impact on the feature of MEMS thin films, and the structural parameter and manufacturing process of MEMS thin films determine the magnitude of residual stress. Based on the conventional single-cantilever-beam micro-rotating structure, this paper presents a new structure and optimizes the corresponding parameters. The ANSYS software is adopted to conduct finite element analysis. In addition, we figure out the relationship between the new structure´s residual stress and the deflection angle according to elasticity formulas and geometric principles. The analysis demonstrates that the original structure has several advantages in aspects of measuring residual stress such as low deviation, high accuracy and simplified process.
Keywords
cantilevers; elasticity; finite element analysis; internal stresses; manufacturing processes; micromechanical devices; thin film devices; ANSYS software; MEMS thin film feature; deflection angle; elasticity formulas; finite element analysis; geometric principles; high accuracy process; low deviation process; manufacturing process; residual stress test structure; simplified process; single-cantilever-beam microrotating structure; structural parameter; Abstracts; Films; Gallium arsenide; Manufacturing processes; Micromechanical devices; Residual stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4799-3296-2
Type
conf
DOI
10.1109/ICSICT.2014.7021635
Filename
7021635
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