A Dual-band CMOS RF Front-end for 2.4/5.2 GHz Applications

Author

Dao, Vu Kien ; Choi, Byoung Gun ; Park, Chul Soon

Author_Institution

Sch. of Eng., Inf. & Commun. Univ., Daejeon

fYear

2007

fDate

9-11 Jan. 2007

Firstpage

145

Lastpage

148

Abstract

A dual-band RF front-end operating at 2.4 and 5.2 GHz is proposed. The dual-band RF front-end consists of a low noise amplifier and a single balance mixer which can be switched to operate at 2.4 and 5.2 GHz with the same hardware. In order to get the good performances at both frequency bands, the LNA uses a switched effective inductance in the input matching. The proposed RF front-end is designed with the 0.18 mum CMOS process with a supply voltage of 1.8 V while dissipating a power of 16 mW. The front-end has conversion gains of 28 dB and 32 dB, DSB noise figure of 3.9 dB and 3.1 dB at 10 MHz with RF frequency of the 2.4 GHz and 5.2 GHz, respectively

Keywords

CMOS integrated circuits; low noise amplifiers; 0.18 mum; 1.8 V; 16 mW; 2.4 GHz; 28 dB; 3.1 dB; 3.9 dB; 32 dB; 5.2 GHz; CMOS process; dual-band CMOS RF front-end; low noise amplifier; noise figure; power dissipation; single balance mixer; switched effective inductance; CMOS process; Dual band; Gain; Hardware; Impedance matching; Inductance; Low-noise amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage; CMOS; Dual-band; RF front-end;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Symposium, 2007 IEEE

Conference_Location

Long Beach, CA

Print_ISBN

1-4244-0445-2

Electronic_ISBN

1-4244-0445-2

Type

conf

DOI

10.1109/RWS.2007.351788

Filename

4160671