Title :
A Dual-band CMOS RF Front-end for 2.4/5.2 GHz Applications
Author :
Dao, Vu Kien ; Choi, Byoung Gun ; Park, Chul Soon
Author_Institution :
Sch. of Eng., Inf. & Commun. Univ., Daejeon
Abstract :
A dual-band RF front-end operating at 2.4 and 5.2 GHz is proposed. The dual-band RF front-end consists of a low noise amplifier and a single balance mixer which can be switched to operate at 2.4 and 5.2 GHz with the same hardware. In order to get the good performances at both frequency bands, the LNA uses a switched effective inductance in the input matching. The proposed RF front-end is designed with the 0.18 mum CMOS process with a supply voltage of 1.8 V while dissipating a power of 16 mW. The front-end has conversion gains of 28 dB and 32 dB, DSB noise figure of 3.9 dB and 3.1 dB at 10 MHz with RF frequency of the 2.4 GHz and 5.2 GHz, respectively
Keywords :
CMOS integrated circuits; low noise amplifiers; 0.18 mum; 1.8 V; 16 mW; 2.4 GHz; 28 dB; 3.1 dB; 3.9 dB; 32 dB; 5.2 GHz; CMOS process; dual-band CMOS RF front-end; low noise amplifier; noise figure; power dissipation; single balance mixer; switched effective inductance; CMOS process; Dual band; Gain; Hardware; Impedance matching; Inductance; Low-noise amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage; CMOS; Dual-band; RF front-end;
Conference_Titel :
Radio and Wireless Symposium, 2007 IEEE
Conference_Location :
Long Beach, CA
Print_ISBN :
1-4244-0445-2
Electronic_ISBN :
1-4244-0445-2
DOI :
10.1109/RWS.2007.351788
