AU-SWCNTS-HF Schottky diodes fabricated by dielectrophoresis

Author

Mengge Li ; Jinwen Zhang

Author_Institution

Nat. Key Lab. of Micro/Nanometer Fabrication Technol., Peking Univ., Beijing, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

In this paper we report a single-walled carbon nanotubes (SWCNTs) Schottky diodes fabricated by DEP technique. The device was made of semiconducting SWCNTs (s-SWCNTs) contacting with asymmetric-work-function metal electrodes of Au and Hf, and the properties were measured and analyzed in detail. The results show that our device has a good rectifying characteristic and could be tuned by a back gate voltage. Above 220K, thermionic emission is the dominant transport mechanism, while tunneling begins to lead below 220K. And the Schottky barrier height was calculated to be 0.48eV.

Keywords

Schottky barriers; Schottky diodes; electrodes; electrophoresis; gold; hafnium; metals; rectifying circuits; single-wall carbon nanotubes; thermionic emission; work function; Au; DEP technique; Hf; Schottky barrier height; asymmetric-work-function metal electrodes; back gate voltage; dielectrophoresis technique; dominant transport mechanism; good rectifying characteristic; property measurement; s-SWCNT; semiconducting SWCNT Schottky diode fabrication; single-walled carbon nanotubes Schottky diode fabrication; thermionic emission; tunneling; Abstracts; Dielectrophoresis; Fabrication; Hafnium; Insulators; Nanotubes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021643

Filename

7021643