مرکز منطقه ای اطلاع رساني علوم و فناوري - A new dual gate design for low current pulse operation in 16Mb ion-implanted bubble memory devices

DocumentCode :

2424372

Title :

A new dual gate design for low current pulse operation in 16Mb ion-implanted bubble memory devices

Author :

Sato, T. ; Hiroshima, M. ; Saito, K. ; Yanai, M. ; Tayooka, T. ; Takeshita, M. ; Suzuki, R.

Author_Institution :

Mobara Works, Hitachi Ltd.

fYear :

1990

fDate :

17-20 April 1990

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Magnetics Conference, 1990. Digests of INTERMAG '90. International

Conference_Location :

Brighton, UK

Type :

conf

DOI :

10.1109/INTMAG.1990.734811

Filename :

734811

Link To Document :