2D photonic structure with square symmetry in the GaAs/AlGaAs LED surface

Author

Suslik, Lubos ; Pudis, Dusan ; Skriniarova, Jaroslava ; Kovac, Jaroslav ; Kubicova, Ivana ; Martincek, Ivan ; Novak, Jozef ; Hascik, Stefan

Author_Institution

Dept. of Phys., Univ. of Zilina, Zilina, Slovakia

fYear

2012

fDate

21-22 May 2012

Firstpage

523

Lastpage

526

Abstract

In this paper, effect of 2D photonic pattern on the emission properties of the GaAs/AlGaAs based light emitting diode (LED) emitting at wavelength of 850 nm is demonstrated. For LED surface patterning, the interference lithography based on a double-exposure process using two-beam interference method was used. The prepared photonic structure pattern in the LED surface was analyzed by atomic force microscope. Such prepared LED with 2D patterned photonic structure shows considerable enhancement of light extraction efficiency and improved far-field radiation pattern.

Keywords

III-V semiconductors; aluminium compounds; atomic force microscopy; gallium arsenide; light emitting diodes; photolithography; photonic crystals; 2D photonic structure pattern effect; GaAs-AlGaAs; LED surface; atomic force microscope; double-exposure process; emission property; far-field radiation pattern; interference lithography; light emitting diode; light extraction efficiency enhancement; square symmetry; two-dimensional photonic crystal structures; wavelength 850 nm; Antenna radiation patterns; Interference; Light emitting diodes; Optical surface waves; Photonic crystals; Photonics; Surface treatment; interference lithography; light emitting diode; photonic structure;

fLanguage

English

Publisher

ieee

Conference_Titel

ELEKTRO, 2012

Conference_Location

Rajeck Teplice

Print_ISBN

978-1-4673-1180-9

Type

conf

DOI

10.1109/ELEKTRO.2012.6225679

Filename

6225679