Title :
Broadband modeling for InP DHBT over 0.2 – 220 GHz
Author :
Zhijiang Zhou ; Jun Liu ; Lingling Sun ; Wei Cheng ; Haiyan Lu
Author_Institution :
Key Lab. for RF Circuits & Syst. of Minist. of Educ., Hangzhou Dianzi Univ., Hangzhou, China
Abstract :
Extraction and verification of small signal equivalent circuit for InP/InGaAs DHBT up to G-band (140 to 220 GHz) is presented in this paper. Based on Π-topology small-signal model, the model parameters are extracted from measured S-parameters directly. Analytical and approximation approach used in this paper allows reducing numbers of model parameters for low frequency analysis. In order to extend the model to higher frequencies, extrinsic parameters are determined using both analytical and optimization methods. The model is verified by comparing the modeled parameters to measured parameters. The investigation results show that the excellent agreements between the measured and simulated data are obtained in the frequency range of 0.2 to 220 GHz.
Keywords :
S-parameters; equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; optimisation; semiconductor device models; Π-topology; DHBT; InP-InGaAs; S-parameter; double heterojunction bipolar transistor; frequency 0.2 GHz to 220 GHz; low frequency analysis; optimization methods; small signal equivalent circuit; Abstracts; Analytical models; Calibration; Indium phosphide; Microwave FET integrated circuits; Microwave integrated circuits; Scattering parameters; Double Heterojunction bipolar transistor (DHBT); small-signal model;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021647