A Switched Gain Low Noise Amplifier for Ultrawideband Wireless Applications

Author

Wu, Chang-Ching ; Yen, Albert ; Cheng, Yu ; Chang, Jen-Chung

Author_Institution

UMC, Hsinchu

fYear

2007

fDate

9-11 Jan. 2007

Firstpage

193

Lastpage

196

Abstract

A low-power switched gain low noise amplifier (LNA) is presented for ultrawideband (UWB) wireless applications. The proposed topology is co-designed with transmit/receive (T/R) switch for mode 1 OFDM applications and the integrated circuit is implemented in a 0.13 mum CMOS technology. The measurement results show a gain-switch of 10 dB where s21 in the frequency band of interest is 17.4-19.2 dB at high gain mode (HG) and 8.8-9.1 dB at low gain mode (LG). The s11 is lower than -17 dB for both modes. The circuit gives noise figures of 3.3-3.9 dB at HG and 4.8-7.9 dB at LG. The input 1 dB compression points (P1dB) are -28 dBm at HG and -20 dBm at LG. Biased by an internal gm bias circuit, the power consumptions of the core circuit are 5.7 mW and 5.2 mW for HG and LG, respectively

Keywords

CMOS integrated circuits; OFDM modulation; low noise amplifiers; low-power electronics; network topology; switched networks; ultra wideband communication; 3.3 to 3.9 dB; 4.8 to 7.9 dB; 5.2 mW; 5.7 mW; CMOS technology; integrated circuit; internal gm bias circuit; low-power switched gain low noise amplifier; mode 1 OFDM applications; transmit-receive switch; ultrawideband wireless applications; CMOS technology; Circuit topology; Gain; Integrated circuit noise; Low-noise amplifiers; Mercury (metals); OFDM; Switches; Switching circuits; Ultra wideband technology; CMOS; LNA; T/R switch; UWB; low noise amplifier; switched gain; transmit/receive switch; ultrawideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Symposium, 2007 IEEE

Conference_Location

Long Beach, CA

Print_ISBN

1-4244-0445-2

Electronic_ISBN

1-4244-0445-2

Type

conf

DOI

10.1109/RWS.2007.351800

Filename

4160683