Title :
A Switched Gain Low Noise Amplifier for Ultrawideband Wireless Applications
Author :
Wu, Chang-Ching ; Yen, Albert ; Cheng, Yu ; Chang, Jen-Chung
Author_Institution :
UMC, Hsinchu
Abstract :
A low-power switched gain low noise amplifier (LNA) is presented for ultrawideband (UWB) wireless applications. The proposed topology is co-designed with transmit/receive (T/R) switch for mode 1 OFDM applications and the integrated circuit is implemented in a 0.13 mum CMOS technology. The measurement results show a gain-switch of 10 dB where s21 in the frequency band of interest is 17.4-19.2 dB at high gain mode (HG) and 8.8-9.1 dB at low gain mode (LG). The s11 is lower than -17 dB for both modes. The circuit gives noise figures of 3.3-3.9 dB at HG and 4.8-7.9 dB at LG. The input 1 dB compression points (P1dB) are -28 dBm at HG and -20 dBm at LG. Biased by an internal gm bias circuit, the power consumptions of the core circuit are 5.7 mW and 5.2 mW for HG and LG, respectively
Keywords :
CMOS integrated circuits; OFDM modulation; low noise amplifiers; low-power electronics; network topology; switched networks; ultra wideband communication; 3.3 to 3.9 dB; 4.8 to 7.9 dB; 5.2 mW; 5.7 mW; CMOS technology; integrated circuit; internal gm bias circuit; low-power switched gain low noise amplifier; mode 1 OFDM applications; transmit-receive switch; ultrawideband wireless applications; CMOS technology; Circuit topology; Gain; Integrated circuit noise; Low-noise amplifiers; Mercury (metals); OFDM; Switches; Switching circuits; Ultra wideband technology; CMOS; LNA; T/R switch; UWB; low noise amplifier; switched gain; transmit/receive switch; ultrawideband;
Conference_Titel :
Radio and Wireless Symposium, 2007 IEEE
Conference_Location :
Long Beach, CA
Print_ISBN :
1-4244-0445-2
Electronic_ISBN :
1-4244-0445-2
DOI :
10.1109/RWS.2007.351800
