Title :
Impacts of annealing processes on the electrical properties of gasb metal-oxide-semiconductor devices
Author :
Zhenhua Zeng ; Bing Sun ; Hudong Chang ; Wei Zhao ; Xu Yang ; Jiahui Zhou ; Shengkai Wang ; Xiong Zhang ; Yiping Cui ; Honggang Liu
Author_Institution :
Microwave Device & IC Dept., Inst. of Microelectron., Beijing, China
Abstract :
In this paper, MOS capacitors and Mg-implanted source and drain p-channel GaSb MOSFETs are fabricated. The effects of post-metallization annealing (PMA) on the performance of these devices have been studied. The 30sec 300 °C PMA in N2 ambient is found to improve the quality of the Al2O3/n-GaSb interface. After PMA, for a device with a gate length of 2μm, a maximum drive current of 10.8 mA/mm, and an Ion/Ioff ratio of 2×103 are achieved.
Keywords :
III-V semiconductors; MOS capacitors; MOSFET; aluminium compounds; annealing; gallium compounds; semiconductor device metallisation; Al2O3-GaSb; MOS capacitors; MOSFET; PMA; annealing processes; electrical properties; metal-oxide-semiconductor devices; post-metallization annealing; size 2 mum; Abstracts; Annealing; Capacitance; Gold; Hysteresis; Logic gates; RNA;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021649
