Title :
On-wafer deembeedding techniques with application to HEMT devices characterization
Author :
Haiyan Lu ; Weibo Wang ; Jianjun Zhou ; Tangshen Chen ; Chen Chen
Author_Institution :
Sci. & Technol. on Monolithic Integrated Circuits & Modules Lab., Nanjing, China
Abstract :
Two different deembedding methods, including open-short method and open-short-load+c deembedding method are discussed in this paper. These deembedding techniques are used to remove all parasitic elements of the device. Comparisons between open-short-load+c and open-short method were made using measured and simulated data on InP HEMT. The results indicate that better accuracy is achieved using open-short-load+c method on high frequency.
Keywords :
III-V semiconductors; high electron mobility transistors; indium compounds; HEMT device; InP; on-wafer deembeedding technique; open-short-Ioad+c deembedding method; parasitic element; Abstracts; Frequency measurement; Measurement uncertainty; Mixers; Q measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021651
