Light output improvement of InGaN/GaN leds by self-assembled Ag nano-particles and SiNx surface roughening

Author

Wenjun Xu ; Peng Zuo ; Longgui Dai ; Yang Jiang ; Jiahui Zhou ; Qi Li ; Haiou Li ; Simin Li ; Hong Chen

Author_Institution

Sch. of Inf. & Commun., Guilin Univ. of Electron. Technol., Guilin, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

A method of surface roughening is introduced to the InGaN/GaN LED chip fabrication process by self-assembled Ag nano-particles. 10nm silver film is deposited by E-beam evaporation (EBV) on SiN_x passivation layer and the silver nano-scale particles self-assemble after 400°C Rapid Thermal Annealing (RTA), which are used as the mask for SiN_x Reactive Ion Etching (RIE), and the surface roughness varies with different duration of etching. Test results show that it´s easy and effective to achieve the light output promotion; after RTA for 3min and RIE for 3min, the light output (LOP) is increased by 77.6% under 20mA injection current.

Keywords

gallium compounds; indium compounds; light emitting diodes; nanoparticles; nitrogen compounds; passivation; self-assembly; surface roughness; E-beam evaporation; EBV; InGaN-GaN; LED chip fabrication process; LOP; RIE; RTA; light output improvement; light output promotion; passivation layer; rapid thermal annealing; reactive ion etching; self-assembled silver nanoparticles; surface roughening; surface roughness; Artificial intelligence; Educational institutions; Gallium nitride; Gold; Nanoscale devices; Optical buffering; Self-assembly;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021652

Filename

7021652