10-35 Nanosecond magneto-resistive memories

It is known that M-R (magneto-resistive) memory elements possess the basic features necessary for a non-volatile, random access, read-write memory. Previous publications cited that an element size of 1.5 x 5 μm² would need a read time of 3-5 μS because of the small signal level. These access times can be greatly reduced by increasing the element size in order to increase the signal level, and using a bridge formation in the read circuitry.