DocumentCode :
2424619
Title :
Ultra-Low-Loss and Broadband Micromachined Inductors and Transformers for 30-100 GHz CMOS RFIC Applications by CMOS-Compatible ICP Deep Trench Technology
Author :
Chang, Jin-Fa ; Lin, Yo-Sheng ; Chen, Chang-Zhi ; Chen, Chi-Chen ; Yeh, Po-Feng ; Huang, Pen-Li ; Wang, Tao ; Lu, Shey-Shi
Author_Institution :
Dept. of Electr. Eng., Nat. Chi-Nan Univ., Puli
fYear :
2007
fDate :
9-11 Jan. 2007
Firstpage :
225
Lastpage :
228
Abstract :
A CMOS-compatible backside inductively-coupled-plasma (ICP) deep trench technology has been developed to enhance the performances of RF monolithic inductors and transformers for 30-100 GHz CMOS RFIC applications. The results show that an 112.8% (from 14.37 to 30.58) and a 201.1% (from 6.33 to 19.06) increase in Q-factor, a 9.7% (from 0.91 to 0.998) and a 28.3% (from 0.778 to 0.998) increase in maximum available power gain (GAmax), and a 0.404 dB (from 0.412 dB to 7.6times10-3 dB) and a 1.082 dB (from 1.09 dB to 8.4times10-3 dB) reduction in minimum noise figure (NFmin) were achieved at 30 GHz and 60 GHz, respectively, for a 162.2 pH TL inductor after the backside ICP dry etching. In addition, we demonstrate that high-coupling and ultra-low-loss 30-100 GHz transformers can be achieved by using single-turn two-layer interlaced stacked (STIS) structure implemented in a standard CMOS technology. Significant improvements in Q-factor (from 5.04 to 29.8 at 70 GHz) and G Amax (from 0.885 to 0.984 at 70 GHz) were achieved for the STIS transformers after the ICP etching. Besides, the ICP technology is also capable of improving the isolation between RF/analog and digital circuits and thus paves a way for SOC
Keywords :
CMOS integrated circuits; Q-factor; inductors; micromechanical devices; microwave integrated circuits; millimetre wave integrated circuits; transformers; 30 to 100 GHz; 60 GHz; 70 GHz; CMOS RFIC applications; CMOS-compatible backside ICP deep trench technology; Q-factor; RF monolithic inductors; backside ICP dry etching; broadband micromachined inductors; broadband micromachined transformers; inductively-coupled-plasma deep trench technology; single-turn two-layer interlaced stacked structure; ultra-low-loss inductors; ultra-low-loss transformers; CMOS technology; Dry etching; Inductors; Isolation technology; Noise figure; Noise measurement; Q factor; Radio frequency; Radiofrequency integrated circuits; Transformers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio and Wireless Symposium, 2007 IEEE
Conference_Location :
Long Beach, CA
Print_ISBN :
1-4244-0445-2
Electronic_ISBN :
1-4244-0445-2
Type :
conf
DOI :
10.1109/RWS.2007.351808
Filename :
4160691
Link To Document :
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