Title :
A radiation-hardened standard cell library for commercial 0.18 µm CMOS technology
Author :
Jia Liu ; Weidong Yang ; Yao Li ; RuiTao Zhang ; Jing Yang ; XiaoGang Feng ; Yuxin Wang ; Dongbing Fu ; Guangbing Chen ; Ruzhang Li
Author_Institution :
Sci. & Technol. on Analog Integrated Circuit Lab., Chongqing, China
Abstract :
The high-performance standard cell library is very important for the ASIC design. A radiation-hardened standard cell library can significantly enhance the reliability and performance of digital circuits that work in a hard radiation environment. We have developed a radiation-hardened standard cell library for the commercial 0.18μm CMOS technology. Some of the radiation-hardened techniques (such as the temporal filtering structure, the P+/N+ guard rings) have been discussed, validated and used for the standard cells. Also we have characterized this RH standard cell library to support the RTL to GDSII ASIC design flow.
Keywords :
CMOS digital integrated circuits; application specific integrated circuits; integrated circuit design; integrated circuit reliability; logic design; radiation hardening (electronics); CMOS technology; GDSII ASIC design flow; digital circuits; hard radiation environment; radiation-hardened standard cell library; radiation-hardened techniques; size 0.18 mum; temporal filtering structure; Application specific integrated circuits; Filtering; Flip-flops; Layout; Libraries; Logic gates; Standards;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021667
