Title :
Recovery of PMOSFET NBTI at different cycles
Author :
Yanrong Cao ; Yi Yang ; Cheng Cao ; Wenlong He ; Xuefeng Zheng ; Xiaohua Ma ; Yue Hao
Author_Institution :
Sch. of Mechano-Electr. Eng., Xidian Univ., Xi´an, China
Abstract :
Negative Bias Temperature Instability (NBTI) has become a serious reliability problem, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we studied the recovery of NBTI systemically at different cycles, and explained the various recovery phenomena and concluded the possible processes occurring in the recovery.
Keywords :
integrated circuit reliability; interface states; negative bias temperature instability; power MOSFET; PMOSFET NBTI recovery; degradation process; different cycles; interface traps; negative bias temperature instability; oxide charges; reliability problem; Abstracts; Degradation; MOSFET circuits; Zirconium;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021668
