Title :
A comprehensive NBTI degradation model based on ring oscillator circuit
Author :
Fang Qiao ; Yandong He ; Leilei Ai ; Ganggang Zhang ; Xing Zhang
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
Abstract :
Negative bias temperature instability (NBTI) as one of CMOS device degradations has been extensively researched. Based on the theories of NBTI degradations, we optimize a reliability model for the frequency degradation of the ring oscillator (RO), and propose a new ring oscillator structure corresponding to the model. In this paper, the new ring oscillator is working under two different static stress modes. We found that the frequency degradation of the same RO is much different in different static stress modes, and the degree of the frequency degradation of different-stage ROs shows the same trend in different stress modes. The model is demonstrated by using the SMIC 65nm, 1.2V technology.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit reliability; negative bias temperature instability; oscillators; semiconductor device models; CMOS device degradations; NBTI degradation model; SMIC technology; frequency degradation; negative bias temperature instability; reliability model; ring oscillator circuit; ring oscillator structure; size 65 nm; static stress modes; voltage 1.2 V; Abstracts; Degradation; Digital signal processing; Market research; Oscillators; Stress;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021670
