An analytical model for the field distribution of SIPOS-field-plate triple RESURF LDMOS

Author

Luda Zheng ; Guojun Zhang ; Zhiqin Zhong ; Shuya Wang ; Liping Dai

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Device, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

An analytical model based on 2D Poisson solution for the field distributions of the triple RESURF LDMOS with an ohmic behavior SIPOS layer is proposed. This model allows calculation of all the interface electric fields in the drift region in terms of the device parameters including the doping concentration and thickness. The avalanche breakdown voltage of the device can be predicted by a simplified equation only relevant with the doping concentration under given thickness parameters and a critical electric field. All analytical results are supported by the simulation results obtained from TCAD software Atlas.

Keywords

MOSFET; Poisson equation; avalanche breakdown; elemental semiconductors; semiconductor device models; semiconductor doping; silicon; 2D Poisson solution; SIPOS layer; SIPOS-field-plate; TCAD software Atlas; analytical model; avalanche breakdown voltage; critical electric field; doping concentration; drift region; field distribution; interface electric fields; ohmic behavior; triple RESURF LDMOS; Abstracts; Analytical models;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021672

Filename

7021672