DocumentCode :
242503
Title :
High frequency modeling of tapered TSV considering MOS effect and frequency-dependent behavior
Author :
Song Liu ; Guangbao Shan ; Chengmin Xie
Author_Institution :
Xi´an Microelectron. Technol. Res. Inst., Xi´an, China
fYear :
2014
fDate :
28-31 Oct. 2014
Firstpage :
1
Lastpage :
3
Abstract :
In this paper, analytical expressions of parasitic of tapered TSV considering the MOS effect and frequency-dependent behavior are proposed. The formulas for tapered TSV are developed from the conventional analytical equations of RLCG for two wire transmission lines. All the proposed formulas are validated by simulation tools, and a good correlation is obtained between the formulas and simulations up to 100GHz. With the proposed formulas, the high frequency characteristic and semiconductor phenomenon of tapered TSV can be fully captured, and the performance of tapered TSV can be evaluated accurately and conveniently prior to 3D IC design.
Keywords :
integrated circuit design; integrated circuit modelling; three-dimensional integrated circuits; 3D IC design; MOS effect; RLCG; frequency-dependent behavior; high frequency characteristic; semiconductor phenomenon; tapered TSV; two wire transmission lines; Abstracts; Metals; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
Type :
conf
DOI :
10.1109/ICSICT.2014.7021675
Filename :
7021675
Link To Document :
بازگشت