Title :
A one-piece compact model for tunneling FETs
Author :
Zelei Sun ; Li Zhang ; Jinyu Zhang ; Zhiping Yu
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
A new, one-piece tunneling FET compact model has been developed based on its physical characteristics. By introducing the drain threshold voltage, the nonlinear current increase in the normally linear region of the output characteristics is modeled. The model prediction has been compared with several experimental data and good agreement is achieved.
Keywords :
field effect transistors; tunnel transistors; drain threshold voltage; nonlinear current; normally linear region; one-piece compact model; physical characteristics; tunneling FET; Abstracts; Lead;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021686
