Title :
Dual trench gates SOI LIGBT with low conduction loss
Author :
Meihua Liu ; Jiang, Frank X. C. ; Xinnan Lin
Author_Institution :
Shenzhen Grad. Sch., Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
Abstract :
A dual trench gates SOI LIGBT is proposed to overcome the problems of large forward voltage drop and large on-state conductance in conventional SOI LIGBT. The combination of double gates and deep p-type anode are adopted in the new structure. The dual trench gates structure is employed to enable more electrons to flow into the n- drift layer and improve the latch-up characteristic. Through the optimization of anode parameters, the low forward voltage drop and low loss can be achieved without sacrificing the BV performance.
Keywords :
electrons; insulated gate bipolar transistors; silicon-on-insulator; anode parameter optimization; conduction loss; deep p-type anode; dual trench gates SOI LIGBT; electrons; forward voltage drop; on-state conductance; Abstracts; Electric potential; Insulated gate bipolar transistors; Layout; Modulation; Performance evaluation; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021687
