DocumentCode
2425634
Title
High Speed Direct Digital Synthesis for Next Generation RF Systems
Author
Elliott, K.R.
Author_Institution
HRL Lab., Malibu, CA
fYear
2007
fDate
9-11 Jan. 2007
Firstpage
423
Lastpage
426
Abstract
Direct digital synthesizers ICs using 0.25 mum InP HBT technologies with clock rates promise to extend the range of such devices to clock rates in excess of 30 GHz. In this work, we report progress towards this goal with the fabrication circuits with improved clock speed at 25 GHz with an approximate clock frequency/power consumption figure-of-merit of 2.5 GHz/W
Keywords
III-V semiconductors; bipolar MMIC; direct digital synthesis; heterojunction bipolar transistors; indium compounds; 0.25 mum; 25 GHz; InP; InP HBT technologies; fabrication circuits; high speed direct digital synthesis; next generation RF systems; Bandwidth; CMOS technology; Clocks; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit synthesis; Integrated circuit technology; Radio frequency; Signal synthesis; Synthesizers; Digital synthesis; InP; Integrated Circuit;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio and Wireless Symposium, 2007 IEEE
Conference_Location
Long Beach, CA
Print_ISBN
1-4244-0445-2
Electronic_ISBN
1-4244-0445-2
Type
conf
DOI
10.1109/RWS.2007.351858
Filename
4160741
Link To Document