Title :
A low-noise low-power amplifier for implantable device for neural signal acquisition
Author :
Li, Ming-Ze ; Tang, Kea-Tiong
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
This paper presents a low-noise low-power amplifier for implantable device for neural signal acquisition. By operating MOS transistors in the subthreshold region, smaller low-frequency noise and lower power consumption can be achieved. A low power, low-noise common-drain buffer and a low-noise, high-linearity, low pass filter are used for high frequency noise filtering. Post-layout simulation shows the input referred noise of the system is 2.19 muVrms from 10 Hz to 10 KHz, power consumption is 55.8 muW, and the NEF is 2.53. The amplifier was fabricated using a T SMC 0.18 mum 1P6M CMOS process. Simulation results show that this low-noise, low-power amplifier is suitable for implantable device applications.
Keywords :
MOSFET; biomedical electronics; biomedical equipment; low noise amplifiers; low-pass filters; medical signal detection; neurophysiology; prosthetics; CMOS process; MOS transistors; common-drain buffer; frequency 10 Hz to 10 kHz; high frequency noise filtering; implantable device; low pass filter; low-frequency noise; low-noise low-power amplifier; neural signal acquisition; post-layout simulation; power consumption; Action Potentials; Amplifiers, Electronic; Biomedical Engineering; Computer Simulation; Computers; Electrodes, Implanted; Electronics, Medical; Electrophysiology; Equipment Design; Humans; Neurons; Signal Processing, Computer-Assisted; Transducers; Transistors, Electronic;
Conference_Titel :
Engineering in Medicine and Biology Society, 2009. EMBC 2009. Annual International Conference of the IEEE
Conference_Location :
Minneapolis, MN
Print_ISBN :
978-1-4244-3296-7
Electronic_ISBN :
1557-170X
DOI :
10.1109/IEMBS.2009.5335204
