A low-noise low-power amplifier for implantable device for neural signal acquisition

Author

Li, Ming-Ze ; Tang, Kea-Tiong

Author_Institution

Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2009

fDate

3-6 Sept. 2009

Firstpage

3806

Lastpage

3809

Abstract

This paper presents a low-noise low-power amplifier for implantable device for neural signal acquisition. By operating MOS transistors in the subthreshold region, smaller low-frequency noise and lower power consumption can be achieved. A low power, low-noise common-drain buffer and a low-noise, high-linearity, low pass filter are used for high frequency noise filtering. Post-layout simulation shows the input referred noise of the system is 2.19 muVrms from 10 Hz to 10 KHz, power consumption is 55.8 muW, and the NEF is 2.53. The amplifier was fabricated using a T SMC 0.18 mum 1P6M CMOS process. Simulation results show that this low-noise, low-power amplifier is suitable for implantable device applications.

Keywords

MOSFET; biomedical electronics; biomedical equipment; low noise amplifiers; low-pass filters; medical signal detection; neurophysiology; prosthetics; CMOS process; MOS transistors; common-drain buffer; frequency 10 Hz to 10 kHz; high frequency noise filtering; implantable device; low pass filter; low-frequency noise; low-noise low-power amplifier; neural signal acquisition; post-layout simulation; power consumption; Action Potentials; Amplifiers, Electronic; Biomedical Engineering; Computer Simulation; Computers; Electrodes, Implanted; Electronics, Medical; Electrophysiology; Equipment Design; Humans; Neurons; Signal Processing, Computer-Assisted; Transducers; Transistors, Electronic;

fLanguage

English

Publisher

ieee

Conference_Titel

Engineering in Medicine and Biology Society, 2009. EMBC 2009. Annual International Conference of the IEEE

Conference_Location

Minneapolis, MN

ISSN

1557-170X

Print_ISBN

978-1-4244-3296-7

Electronic_ISBN

1557-170X

Type

conf

DOI

10.1109/IEMBS.2009.5335204

Filename

5335204