Title :
Location and hardness of the oxide breakdown in short channel n- and p-MOSFETs
Author :
Crupi, F. ; Kaczer, B. ; Degraeve, R. ; De Keersgieter, A. ; Groeseneken, G.
Author_Institution :
Dipt. di Fisica della Materia, Universita degli Studi di Messina, Italy
Abstract :
The location and the hardness of the oxide breakdown in short channel nand p-MOSFETs stressed at high voltages in inversion and in accumulation are investigated. We show that in all cases the breakdown location is uniformly distributed along the total channel length and we find that the hardest circuit-killing oxide breakdowns occur in the case of n-MOSFETs stressed in inversion.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit reliability; inversion layers; semiconductor device breakdown; CMOS; accumulation; breakdown location; circuit-killing oxide breakdowns; inversion; nMOSFETs; oxide breakdown; pMOSFETs; reliability; short channel MOSFETs; total channel length; Breakdown voltage; CMOS process; Charge carriers; Current density; Electric breakdown; Grounding; MOSFET circuits; Stress; Threshold voltage; Transconductance;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2002. 40th Annual
Print_ISBN :
0-7803-7352-9
DOI :
10.1109/RELPHY.2002.996610
