Title :
Modeling and thermal analysis of silicon infrared emitter based on SOI wafer
Author :
Qian, Kun ; Li, Fangqiang ; San, Haisheng ; Chen, Xuyuan
Author_Institution :
Pen-Tung Sah Micro-Nano Technol. Res. Center, Xiamen Univ., Xiamen, China
Abstract :
Silicon infrared emitter was a key component in the infrared gas detection systems. In this paper, finite element thermal-electric simulation in ANSYS is used to simulate polysilicon infrared emitters based on silicon on insulator (SOI) technology. In the simulation, silicon infrared emitters were studied with respect to power consumption, response time, surface temperature distribution and thermal induced stress. Based on the results and discussion, a new bridge structure is proposed in order to optimize device performance.
Keywords :
finite element analysis; infrared detectors; micromechanical devices; power consumption; silicon-on-insulator; temperature distribution; thermal analysis; thermal stresses; ANSYS; MEMS; SOI wafer; bridge structure; finite element thermal-electric simulation; infrared gas detection system; polysilicon infrared emitter; power consumption; response time; silicon on insulator; surface temperature distribution; thermal analysis; thermal induced stress; MEMS; gas analysis; infrared emitter; silicon on insulator (SOI);
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2010 5th IEEE International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-4244-6543-9
DOI :
10.1109/NEMS.2010.5592163
