DocumentCode
2426223
Title
A high output mode for submicron M-R memory cells
Author
Pohm, A.V. ; Daughton, J.M. ; Spears, K.E.
Author_Institution
Nonvolatile Electronics Inc.
fYear
1992
fDate
13-16 April 1992
Firstpage
109
Lastpage
109
Keywords
Anisotropic magnetoresistance; Electronics industry; Industrial electronics; Magnetic anisotropy; Magnetic materials; Magnetic sensors; Magnetosphere; Nonvolatile memory; Perpendicular magnetic anisotropy; Signal restoration;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 1992. Digests of Intermag '92., International
Conference_Location
St. Louis, MO, USA
Print_ISBN
0-7803-0637-6
Type
conf
DOI
10.1109/INTMAG.1992.696292
Filename
696292
Link To Document