DocumentCode :
2426223
Title :
A high output mode for submicron M-R memory cells
Author :
Pohm, A.V. ; Daughton, J.M. ; Spears, K.E.
Author_Institution :
Nonvolatile Electronics Inc.
fYear :
1992
fDate :
13-16 April 1992
Firstpage :
109
Lastpage :
109
Keywords :
Anisotropic magnetoresistance; Electronics industry; Industrial electronics; Magnetic anisotropy; Magnetic materials; Magnetic sensors; Magnetosphere; Nonvolatile memory; Perpendicular magnetic anisotropy; Signal restoration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 1992. Digests of Intermag '92., International
Conference_Location :
St. Louis, MO, USA
Print_ISBN :
0-7803-0637-6
Type :
conf
DOI :
10.1109/INTMAG.1992.696292
Filename :
696292
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2426223
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