Excess hot-carrier currents in SOI MOSFETs and its implications

Author

Su, Pin ; Goto, Ken-Ichi ; Sugii, Toshihiro ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

2002

fDate

2002

Firstpage

93

Lastpage

97

Abstract

This work demonstrates that excess hot-carrier currents in SOI MOSFETs are caused by self-heating. Self-heating-free I_SUB data should be used for dynamic lifetime extrapolation due to long thermal time constant. The underlying mechanism, increased impact ionization with temperature at low drain bias, is studied experimentally from the angle of thermal activation energy. Our study indicates that the driving force of impact ionization transitions from the electric field to the lattice temperature with power-supply scaling below 1.2 V.

Keywords

MOSFET; hot carriers; impact ionisation; low-power electronics; semiconductor device reliability; silicon-on-insulator; thermal resistance; 1.2 V; SOI MOSFETs; Si; drain bias; dynamic lifetime extrapolation; excess hot-carrier currents; impact ionization; lattice temperature; power-supply scaling; self-heating; thermal activation energy; thermal time constant; CMOS technology; Hot carriers; Impact ionization; Laboratories; MOSFETs; Silicon; Substrates; Temperature dependence; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2002. 40th Annual

Print_ISBN

0-7803-7352-9

Type

conf

DOI

10.1109/RELPHY.2002.996615

Filename

996615