A quadruple-anchored RF-MEMS switch for switched-line phase shifters

Author

Zang, Faheng ; Ding, Guifu ; Su, Zhijuan ; Tang, Jun ; Deng, Min

Author_Institution

Nat. Key Lab. of Nano/Micro Fabrication Technol., Shanghai Jiao Tong Univ., Shanghai, China

fYear

2010

fDate

20-23 Jan. 2010

Firstpage

149

Lastpage

152

Abstract

In the paper, the design, simulation and fabrication of a quadruple-anchored MEMS switch for switched-line phase shifters are presented. Swept inner bends were developed to lower the actuate voltage and suppress the stress of the deformed switch. Physical dimension of the MEMS switch is limited to 400μm × 400μm. The 3μm-thick polyimide membrane is spun between the bias and coplanar waveguides as the dielectric. The 200nm sputtered Al₂O₃ ensures the isolation of the deformed beam and the CPW. With the finite element method, the pull-in voltage of the developed switch is simulated to be 29.6V. Further, the insertion loss of the MEMS switch in up-state is lower than 1dB; the return loss is -12dB at 10GHz.

Keywords

aluminium compounds; coplanar waveguides; finite element analysis; microswitches; microwave switches; phase shifters; polymers; sputtering; Al₂O₃; coplanar waveguides; deformed beam isolation; finite element method; polyimide membrane; quadruple anchored RF MEMS switch; size 200 nm; size 3 mum; size 400 mum; switched line phase shifters; voltage 29.6 V; RF-MEMS switch; phase shifter; pull-in voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems (NEMS), 2010 5th IEEE International Conference on

Conference_Location

Xiamen

Print_ISBN

978-1-4244-6543-9

Type

conf

DOI

10.1109/NEMS.2010.5592174

Filename

5592174