Title :
Novel ESD protection structure with embedded SCR LDMOS for smart power technology
Author :
Lee, Jian-Hsing ; Shih, J.R. ; Tang, C.S. ; Liu, K.C. ; Wu, Y.H. ; Shiue, R.Y. ; Ong, T.C. ; Peng, Y.K. ; Yue, J.T.
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
Abstract :
In this paper, a new robust ESD protection structure has been proposed for smart power technology. By inserting a P+ diffusion into the drain region of 40 V-LDMOS power transistor, the embedded SCR (ESCR-LDMOS) device can be built and without changing any DC I-V characteristics of a 40 V-LDMOS power transistor. It is also found that the method with P+ strap inserted into drain region (N+ in NW) can improve the ESD failure threshold from 1 kV to 6 kV for HBM and from 100 V to 350 V for MM.
Keywords :
MOS integrated circuits; electrostatic discharge; failure analysis; power MOSFET; power integrated circuits; thyristors; 350 V; 40 V; 6 kV; DC I-V characteristics; ESD protection structure; HBM; LDMOS power transistor; MM; P+ diffusion; P+ strap; drain region; embedded SCR LDMOS; failure threshold; smart power technology; Current distribution; Current measurement; Electrostatic discharge; Performance evaluation; Power transistors; Protection; Pulse measurements; Stress; Thyristors; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2002. 40th Annual
Print_ISBN :
0-7803-7352-9
DOI :
10.1109/RELPHY.2002.996629
