High current transmission line pulse (TLP) and ESD characterization of a silicon germanium heterojunction bipolar transistor with carbon incorporation

Author

Ronan, B. ; Voldman, S. ; Lanzerotti, L. ; Rascoe, J. ; Sheridan, D. ; Rajendran, K.

Author_Institution

Silicon Germanium Dev., IBM Commun. Res. & Dev. Center, Essex Junction, VT, USA

fYear

2002

fDate

2002

Firstpage

175

Lastpage

183

Abstract

Electrostatic discharge robustness of an epitaxial-base pseudomorphic Silicon Germanium Heterojunction Bipolar Transistor (HBT) device with Carbon incorporation is shown for the first time. Experimental results show that incorporation of Carbon in the base of a SiGe HBT device improves power-to-failure variation by improved control of the base width and base width distribution.

Keywords

Ge-Si alloys; carbon; electrostatic discharge; failure analysis; heterojunction bipolar transistors; semiconductor materials; SiGe:C; base width; base width distribution; carbon incorporation; electrostatic discharge; epitaxial-base pseudomorphic silicon-germanium heterojunction bipolar transistor; power-to-failure variation; transmission line pulse; Boron alloys; Electrostatic discharge; Germanium silicon alloys; Heterojunction bipolar transistors; Impurities; Indium phosphide; Power transmission lines; Semiconductor films; Silicon germanium; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2002. 40th Annual

Print_ISBN

0-7803-7352-9

Type

conf

DOI

10.1109/RELPHY.2002.996632

Filename

996632