DocumentCode :
2426622
Title :
The selection of cell optimal form and cells arrangement on the chip at DMOSFET design
Author :
Smerklo, Lubomyr ; Nevzorov, Valentin
Author_Institution :
Lviv Radio Eng. Res. Inst., Ukraine
fYear :
2003
fDate :
18-22 Feb. 2003
Firstpage :
285
Abstract :
The influence of cell form and cells arrangement on on-resistance Rs-d of a power DMOSFET is considered. It is shown that triangular cells have improved parameters in comparison with square and hexagonal cells.
Keywords :
electric resistance; electronic design automation; optimisation; power MOSFET; DMOSFET design; cell optimal form; cell parameters; cells arrangement; hexagonal cells; on-resistance; power DMOSFET; self-aligned DMOS multicell transistor structure; square cells; triangular cells; Conductivity; Electric resistance; Electronic mail; Equations; Lead; MOSFET circuits; Mathematical model; Structural engineering; Switching circuits; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
CAD Systems in Microelectronics, 2003. CADSM 2003. Proceedings of the 7th International Conference. The Experience of Designing and Application of
Print_ISBN :
966-553-278-2
Type :
conf
DOI :
10.1109/CADSM.2003.1255063
Filename :
1255063
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2426622
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