Monolithic InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low energy arsenic ion implantation induced intermixing

Author

Ng, S.L. ; Lim, H.S. ; Ooi, B.S. ; Lam, Y.L. ; Zhou, Y. ; Chan, Y.C. ; Aimez, V. ; Beauvais, J. ; Beerens, J.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore

fYear

2000

fDate

24-28 July 2000

Lastpage

10

Abstract

10-channel monolithic multiple wavelength electro-absorption (EA) modulators have been fabricated onto a single chip using a one-step quantum well intermixing technique based on As/sup 2+/ ion implantation through a graded thickness silicon dioxide mask. Each individual modulator has a dimension of 400/spl times/500 /spl mu/m/sup 2/, 50 /spl mu/m width of active window, 500 /spl mu/m cavity length and 20 /spl mu/m width of isolation trench. The EA intensity modulators were characterized at room temperature using end-fire-coupling technique. Samples used in this study had a InGaAs/InGaAsP MQW (five quantum wells) laser structure grown by metal-organic vapor phase epitaxy and were of the form of a stepped graded index heterostructure.

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gradient index optics; indium compounds; integrated optics; integrated optoelectronics; intensity modulation; ion beam mixing; ion implantation; optical fabrication; quantum well devices; InGaAs-InGaAsP; InGaAs-InGaAsP:As; MQW laser structure; electroabsorption intensity modulator; end-fire-coupling technique; graded thickness mask; integrated modulator; ion implantation induced intermixing; low energy As/sup 2+/ ion implantation; metal-organic vapor phase epitaxy; monolithic multiple wavelength modulators; one-step quantum well intermixing; single chip; stepped graded index heterostructure; Absorption; Bandwidth; Chirp modulation; Costs; Indium gallium arsenide; Intensity modulation; Ion implantation; Quantum well lasers; Semiconductor lasers; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic-Enhanced Optics, Optical Sensing in Semiconductor Manufacturing, Electro-Optics in Space, Broadband Optical Networks, 2000. Digest of the LEOS Summer Topical Meetings

Conference_Location

Aventura, FL, USA

ISSN

1099-4742

Print_ISBN

0-7803-6252-7

Type

conf

DOI

10.1109/LEOSST.2000.869676

Filename

869676