Title :
Reliability test of MESFETs in presence of hot electrons
Author :
Mil´shtein, S. ; Ersland, P. ; Gil, C.
Author_Institution :
ECE Dept., Univ. of Massachusettes, Lowell, MA, USA
Abstract :
Temperature profiles of hot electrons were modeled in MESFETs undergoing stress tests, where the gate voltage was close to pinch-off and the drain voltage was slightly lower than breakdown. These profiles were compared with the results of degradation during the stress. We present the results of two-terminal hot electron stress on MESFETs, and discuss the probability of various defect formations resulting from this stress.
Keywords :
Schottky gate field effect transistors; hot carriers; life testing; semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; MESFETs; breakdown; defect formations; degradation; drain voltage; gate voltage; hot electrons; pinch-off; probability; reliability test; stress tests; temperature profiles; two-terminal stress; Breakdown voltage; Degradation; Electrons; Equations; FETs; MESFETs; Scattering; Software testing; Stress; Temperature;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2002. 40th Annual
Print_ISBN :
0-7803-7352-9
DOI :
10.1109/RELPHY.2002.996641
