A relation model of yield and reliability for the gate oxide failures

Author

Kim, Taeho ; Kuo, Way ; Chien, Wei-Ting Kary

Author_Institution

Dept. of Ind. Eng., Texas A&M Univ., College Station, TX, USA

fYear

1998

fDate

19-22 Jan 1998

Firstpage

428

Lastpage

433

Abstract

Yield and reliability are two important factors affecting the profitability of semiconductor manufacturing. By using the relationship between yield and reliability, which is based on the defect reliability physics, and combining this with fault coverage, the authors develop a model to predict the gate oxide reliability of integrated circuits (ICs). This model explains well some previous experimental results performed to verify the relationship between yield and reliability and will help identify extrinsic failure mechanisms or electrical degradation caused by defects

Keywords

failure analysis; integrated circuit reliability; integrated circuit yield; reliability theory; defect reliability physics; electrical degradation; extrinsic failure mechanisms; fault coverage; fault identification; gate oxide failures; gate oxide reliability; integrated circuits; profitability; reliability modelling; semiconductor manufacturing; yield modelling; Circuit faults; Failure analysis; Integrated circuit modeling; Integrated circuit reliability; Integrated circuit yield; Physics; Predictive models; Profitability; Semiconductor device manufacture; Semiconductor device reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability and Maintainability Symposium, 1998. Proceedings., Annual

Conference_Location

Anaheim, CA

ISSN

0149-144X

Print_ISBN

0-7803-4362-X

Type

conf

DOI

10.1109/RAMS.1998.653815

Filename

653815