DocumentCode
2426810
Title
High-sensitivity 1-Gb/s CMOS receiver integrated with a III-V photodiode by wafer-bonding
Author
Nakahara, T. ; Tsuda, H. ; Tateno, K. ; Ishihara, N. ; Amano, C.
Author_Institution
NTT Photonics Labs., Kanagawa, Japan
fYear
2000
fDate
24-28 July 2000
Abstract
We have developed a wafer-bonded hybrid receiver using 0.5-/spl mu/m CMOS that operates with a single 3.3-V supply voltage. The receiver circuit is small and simple, has high sensitivity and a broad bandwidth, and operates at either 0.85 or 1.55 /spl mu/m due to the direct attachment of the III-V photodiode without parasitic capacitance.
Keywords
CMOS analog integrated circuits; integrated optoelectronics; low-power electronics; operational amplifiers; optical receivers; photodiodes; wafer bonding; 0.5 micron; 0.85 micron; 1 Gbit/s; 1.55 micron; 3.3 V; CMOS photoreceiver; III-V photodiode integrated; broad bandwidth; high-sensitivity; hybrid receiver; transimpedance amplifier; wafer-bonding; Bandwidth; CMOS process; Driver circuits; III-V semiconductor materials; Inverters; Optical amplifiers; Optical receivers; Photodiodes; Radiofrequency amplifiers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic-Enhanced Optics, Optical Sensing in Semiconductor Manufacturing, Electro-Optics in Space, Broadband Optical Networks, 2000. Digest of the LEOS Summer Topical Meetings
Conference_Location
Aventura, FL, USA
ISSN
1099-4742
Print_ISBN
0-7803-6252-7
Type
conf
DOI
10.1109/LEOSST.2000.869680
Filename
869680
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