Title :
Alignment tolerant hybrid photoreceivers using inverted MSMs
Author :
Vrazel, M. ; Chang, J.J. ; Brooke, M. ; Jokerst, N.M. ; Dagnali, G. ; Brown, A.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We report on the hybrid integration of a thin film large area (250/spl times/250 /spl mu/m/sup 2/, low capacitance (0.43 pF), high responsivity (0.5 A/W, with no AR coating) InGaAs/InP inverted-MSM onto a Si CMOS differential receiver circuit. This integrated receiver demonstrated a bit-error-rate of 10/sup -11/ at 414 Mbps and 0.1/spl times/10/sup -10/ at 480 Mbps. The alignment tolerance of this receiver has been modeled and measured at 200 Mbps, and the theoretical results correspond quite well to experimental data.
Keywords :
CMOS integrated circuits; III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photodetectors; 0.43 pF; 200 Mbit/s; 250 micron; 414 Mbit/s; 480 Mbit/s; CMOS differential receiver circuit; InGaAs-InP; alignment tolerance; bit-error-rate; high responsivity; hybrid integration; hybrid photoreceivers; inverted MSM; low capacitance; photodetector speed; thin film large area receiver; Bonding; Capacitance; Circuit testing; Coatings; Detectors; Electrodes; Etching; Optical fiber communication; Photodetectors; Substrates;
Conference_Titel :
Electronic-Enhanced Optics, Optical Sensing in Semiconductor Manufacturing, Electro-Optics in Space, Broadband Optical Networks, 2000. Digest of the LEOS Summer Topical Meetings
Conference_Location :
Aventura, FL, USA
Print_ISBN :
0-7803-6252-7
DOI :
10.1109/LEOSST.2000.869683
