Title :
Evaluation of STI degradation causing DRAM standby current failure in burn-in mode operation using a carrier injection method
Author :
Hong, S.W. ; Jin, G.Y. ; Seo, H.W. ; Lee, D.I. ; Song, J.-H. ; Noh, J.Y. ; Oh, Y.C. ; Kim, J.-Y. ; Kim, D.H. ; Kim, H.H. ; Won, D.J. ; Lee, W.W. ; Song, D.H. ; Lee, K.Y. ; Lee, W.S.
Author_Institution :
Samsung Electron., Kyunggi, South Korea
Abstract :
P+ to p+ isolation degradation that causes DRAM standby current failure under burn-in mode operation is investigated. Although the isolation of the test devices dose not show any degradation or weakness in conventional electrical characterization, it is found that the degradation can be observed by a carrier injection method. Using the simple carrier injection method to simulate the real operating condition of a DRAM chip, a potential problem of the isolation degradation can be easily found, which cannot be screened by conventional electrical measurement.
Keywords :
DRAM chips; failure analysis; isolation technology; DRAM chip; burn-in mode; carrier injection; electrical characteristics; p+ to p+ isolation degradation; shallow trench isolation; standby current failure; Current measurement; Degradation; Electric variables measurement; Etching; Oxidation; Random access memory; Semiconductor device measurement; Stress measurement; Testing; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2002. 40th Annual
Print_ISBN :
0-7803-7352-9
DOI :
10.1109/RELPHY.2002.996649