Title :
Electrical behavior on packaging module for the novel photoelectric sensor
Author :
Han, J.Q. ; Wang, Y.P. ; Guo, F.M. ; Xu, B. ; Xiong, D.Y. ; Zhou, M.C. ; Ye, Y.C. ; Zhu, Z.Q. ; Chu, J.H.
Author_Institution :
Key Lab. of Polarized Mater. & Device, East China Normal Univ., Shanghai, China
Abstract :
This paper presents the electrical performance on low-dimensional quantum structure photoelectric sensor. The equivalent circuit model for photoelectric sensor with quantum-dot quantum-well hybrid structure was applied. The parasitical parameters can be used to investigate the performance of photoelectric detector. Based on this model, specific readout circuit was designed and simulated. A prototype was fabricated in 0.5-μm n-well standard CMOS process. Test results were presented and analyzed.
Keywords :
CMOS image sensors; equivalent circuits; packaging; photodetectors; quantum dots; quantum wells; CMOS process; electrical performance; equivalent circuit model; packaging module; photoelectric detector; photoelectric sensor; quantum dot; quantum structure; quantum-well hybrid structure; size 0.5 mum; Readout Circuit; equivalent circuit; quantum structure photoelectric sensor;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2010 5th IEEE International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-4244-6543-9
DOI :
10.1109/NEMS.2010.5592200
