DocumentCode :
2427192
Title :
Use of EEPROM-based sensors in investigating physical mechanisms responsible for charging damage
Author :
Lukaszek, Wes
Author_Institution :
Wafer Charging Monitors, Inc, Woodside, CA, USA
fYear :
2002
fDate :
2002
Firstpage :
346
Lastpage :
353
Abstract :
Wafer charging damage in IC process equipment is the result of complex interactions between the wafer environment and the wafer. EEPROM-based sensors have been used recently to quantify the UV and charging characteristics of process tools, and to examine the interactions between the wafer environment and the wafer. This paper discusses these topics, relates them to charging damage, and illustrates them with examples from experiments performed in different process tools.
Keywords :
EPROM; electric sensing devices; integrated circuit technology; surface charging; EEPROM sensor; IC process equipment; UV characteristics; wafer charging damage; Current density; Dielectrics and electrical insulation; Electrodes; Ion implantation; Plasma immersion ion implantation; Plasma materials processing; Plasma properties; Sensor phenomena and characterization; Surface charging; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2002. 40th Annual
Print_ISBN :
0-7803-7352-9
Type :
conf
DOI :
10.1109/RELPHY.2002.996658
Filename :
996658
Link To Document :
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