The effects of total ionizing dose irradiation on CMOS technology and the use of design techniques to mitigate total dose effects

Summary form only given. The effects of total ionizing dose irradiation such as gamma- and X-rays as well as energetic electrons and protons on CMOS performance, at the single device level and at the circuit level, are described. Data are presented on the intrinsic total dose hardness of various CMOS processes, which indicates an increase in total dose hardness as CMOS technology is scaled. Design techniques and their efficacy in mitigating against total dose effects are also described.