• DocumentCode
    2427383
  • Title

    Analysis of the exponentially decaying transient current in MOS capacitors

  • Author

    Yamada, Ren-ichi ; Yugami, Jiro

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    387
  • Lastpage
    392
  • Abstract
    A long time constant transient current of a metal-oxide-semiconductor (MOS) capacitor during gate biasing has been widely studied to analyze the traps in the oxide layer. The time constant is of the order of a few seconds. In this study, we measured the short time constant (typically shorter that 1 s) transient current to analyze the traps located closer to the interface. We consequently found another type of transient current, which is caused by hole trapping at the Si/SiO2 interface traps. The energy level of the interface traps is 0.2 eV from the bottom of Si conduction band.
  • Keywords
    MOS capacitors; hole traps; interface states; semiconductor device measurement; semiconductor device models; semiconductor-insulator boundaries; transient analysis; 1 s; MOS capacitor; Si-SiO2; Si/SiO2 interface traps; exponentially decaying transient current; gate biasing; hole trapping; modeling; oxide trap; short time constant transient current; Current measurement; Degradation; Energy states; MOS capacitors; MOSFETs; Steady-state; Stress; Time measurement; Transient analysis; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2002. 40th Annual
  • Print_ISBN
    0-7803-7352-9
  • Type

    conf

  • DOI
    10.1109/RELPHY.2002.996668
  • Filename
    996668
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2427383