Soft breakdown enhanced hysteresis effects in ultra-thin oxide SOI nMOSFETs

Author

Chen, M.C. ; Tsai, C.W. ; Gu, S.H. ; Wang, Tahui ; Lu, S. Huang ; Lin, S.W. ; Yang, G.S. ; Chen, J.K. ; Chien, S.C. ; Loh, Y.T. ; Liu, F.T.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan

fYear

2002

fDate

2002

Firstpage

404

Lastpage

408

Abstract

The impact of soft breakdown location on V_t hysteresis in partially depleted SOI nMOSFETs with ultra-thin oxide (1.6 nm) is investigated. Two breakdown enhanced hysteresis modes are identified. In a channel breakdown MOSFET, excess holes attributed to valence electron tunneling flow to the floating body and thus cause V_t hysteresis in gate bias switching. In contrast, for a drain-edge breakdown device, enhanced V_t hysteresis is observed during drain bias switching because of increased band-to-band tunneling current.

Keywords

CMOS integrated circuits; MOSFET; dielectric thin films; hysteresis; semiconductor device breakdown; silicon-on-insulator; tunnelling; SOI n-MOSFETs; band-to-band tunneling current; breakdown enhanced hysteresis modes; channel breakdown MOSFET; drain bias switching; drain-edge breakdown device; gate bias switching; n-channel MOSFET; partially depleted SOI nMOSFETs; scaled SOI CMOS technology; soft breakdown enhanced hysteresis effects; soft breakdown location; threshold voltage hysteresis; ultra-thin oxide; valence electron tunneling; CMOS technology; Charge carrier processes; Electric breakdown; Feedback; Hysteresis; Leakage current; MOSFET circuits; Silicon on insulator technology; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2002. 40th Annual

Print_ISBN

0-7803-7352-9

Type

conf

DOI

10.1109/RELPHY.2002.996670

Filename

996670