DocumentCode
2427506
Title
Charging effects on reliability of HfO2 devices with polysilicon gate electrode
Author
Onishi, Katsunori ; Kang, Chang Seok ; Choi, Rino ; Cho, Hag-Ju ; Gopalan, Sundar ; Nieh, Renee ; Krishnan, Siddharth ; Lee, Jack C.
Author_Institution
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fYear
2002
fDate
2002
Firstpage
419
Lastpage
420
Abstract
Time dependent dielectric breakdown and bias temperature instability of HfO2 devices with polysilicon gate electrodes are studied. Both N and PMOS capacitors have sufficient TDDB lifetime, whereas PMOS capacitors show gradual increase in the leakage current during stress. HfO2 PMOSFET´s without nitridation have sufficient immunity against negative bias temperature instability. Bias temperature instability for NMOS can be a potential scaling limit for HfO2.
Keywords
CMOS integrated circuits; MOSFET; dielectric thin films; electric breakdown; elemental semiconductors; hafnium compounds; integrated circuit reliability; integrated circuit testing; leakage currents; permittivity; silicon; thermal stability; CMOS device application; HfO2 device reliability; HfO2 scaling limits; HfO2-Si; NMOS capacitors; PMOS capacitors; PMOSFET; Si; bias temperature instability immunity; capacitor TDDB lifetime; dielectric charging effects; leakage current; negative bias temperature instability; nitridation; polysilicon gate electrodes; stress; time dependent dielectric breakdown; Capacitors; Dielectric breakdown; Electrodes; Hafnium oxide; Leakage current; MOS devices; MOSFET circuits; Negative bias temperature instability; Stress; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2002. 40th Annual
Print_ISBN
0-7803-7352-9
Type
conf
DOI
10.1109/RELPHY.2002.996675
Filename
996675
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