Title :
Charging effects on reliability of HfO2 devices with polysilicon gate electrode
Author :
Onishi, Katsunori ; Kang, Chang Seok ; Choi, Rino ; Cho, Hag-Ju ; Gopalan, Sundar ; Nieh, Renee ; Krishnan, Siddharth ; Lee, Jack C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
Time dependent dielectric breakdown and bias temperature instability of HfO2 devices with polysilicon gate electrodes are studied. Both N and PMOS capacitors have sufficient TDDB lifetime, whereas PMOS capacitors show gradual increase in the leakage current during stress. HfO2 PMOSFET´s without nitridation have sufficient immunity against negative bias temperature instability. Bias temperature instability for NMOS can be a potential scaling limit for HfO2.
Keywords :
CMOS integrated circuits; MOSFET; dielectric thin films; electric breakdown; elemental semiconductors; hafnium compounds; integrated circuit reliability; integrated circuit testing; leakage currents; permittivity; silicon; thermal stability; CMOS device application; HfO2 device reliability; HfO2 scaling limits; HfO2-Si; NMOS capacitors; PMOS capacitors; PMOSFET; Si; bias temperature instability immunity; capacitor TDDB lifetime; dielectric charging effects; leakage current; negative bias temperature instability; nitridation; polysilicon gate electrodes; stress; time dependent dielectric breakdown; Capacitors; Dielectric breakdown; Electrodes; Hafnium oxide; Leakage current; MOS devices; MOSFET circuits; Negative bias temperature instability; Stress; Temperature dependence;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2002. 40th Annual
Print_ISBN :
0-7803-7352-9
DOI :
10.1109/RELPHY.2002.996675
