Title :
Electrothermal simulations of SiC GTO thyristors containing gate and drift regions of the same or opposite polarity in a clamped inductive-load circuit
Author_Institution :
Sensors & Electron Devices Directorate, US Army Res. Lab., Adelphi, MD, USA
Abstract :
Two-dimensional electrothermal simulations were done for various silicon carbide (SiC) gate turn-off (GTO) thyristor structures to increase their reliability when used in power conversion circuits for electric motor drive. Accurate high-temperature models to represent 4H-SiC bulk properties were included. The influences of having the gates on a region of the same or opposite polarity as the drift region and thermal resistance of the package are discussed.
Keywords :
high-temperature electronics; semiconductor device models; semiconductor device reliability; silicon compounds; thermal resistance; thyristor circuits; thyristors; wide band gap semiconductors; 4H-SiC bulk properties; SiC; clamped inductive-load circuit; drift region; electric motor drive; gate region; high-temperature model; polarity; power conversion circuit; reliability; silicon carbide gate turn-off thyristor; thermal resistance; two-dimensional electrothermal simulation; Circuit simulation; Electric motors; Electric resistance; Electrothermal effects; Resistance heating; Silicon carbide; Temperature; Thermal conductivity; Thermal resistance; Thyristors;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2002. 40th Annual
Print_ISBN :
0-7803-7352-9
DOI :
10.1109/RELPHY.2002.996677
