Title :
AlGaAs composition measurements from in situ optical reflectance
Author :
Bertness, K.A. ; Armstrong, J.T. ; Marinenko, R.B. ; Robins, L.H. ; Paul, A.J. ; Pellegrino, J.G. ; Amirtharaj, P.M. ; Chandler-Horowitz, D.
Author_Institution :
Nat. Inst. of Stand. & Technol., Boulder, CO, USA
Abstract :
We describe preliminary determinations of AlGaAs layer composition using in situ optical reflectance spectroscopy (ORS) data. RHEED oscillations are used to independently determine the composition of the AlGaAs layers. The results are compared with ex situ measurements. Although additional work is needed to refine the uncertainty estimates and reduce sources of error, we find that growth rate as measured by ORS agrees with RHEED oscillation data to within 2%. The ultimate goal of this project is to produce standard reference materials of certified alloy composition to mole-fraction uncertainty of 0.002 for a range of important III-V alloys.
Keywords :
III-V semiconductors; aluminum compounds; gallium arsenide; molecular beam epitaxial growth; process monitoring; reflectivity; semiconductor epitaxial layers; spectrochemical analysis; AlGaAs; MBE; RHEED oscillations; certified alloy composition; growth rate; in situ optical reflectance; layer composition measurement; mole-fraction uncertainty; standard reference materials; Artificial intelligence; Calibration; Doping; NIST; Optical refraction; Photonic integrated circuits; Reflectivity; Semiconductor process modeling; Temperature; Time measurement;
Conference_Titel :
Electronic-Enhanced Optics, Optical Sensing in Semiconductor Manufacturing, Electro-Optics in Space, Broadband Optical Networks, 2000. Digest of the LEOS Summer Topical Meetings
Conference_Location :
Aventura, FL, USA
Print_ISBN :
0-7803-6252-7
DOI :
10.1109/LEOSST.2000.869715
