Title :
Sub-0.25um MOSFET impact ionization and photon generation dynamics based on high-resolution photo-emission spectrum analysis
Author :
Muniandy, Ravisangar
Author_Institution :
Q&R Dept, Intel Philippines, Cavite, Philippines
Abstract :
High-resolution photon emission spectrometry has been employed to study impact ionization and photon generation dynamics in deep sub-micron MOSFETs. Physical impact ionization - an indirect band-gap recombination model, which is in good agreement with the broadband spectrum properties, has been developed. The abrupt change in the photon emission spectrum profile at 1.8 eV has been attributed to energy-momentum conservation requirements during impact ionization. The abrupt changes in photon intensity with respect to photon energy need to be accounted for in the electron population and electron mean free path derivation, using photoemission methods.
Keywords :
MOSFET; electron mean free path; electron-hole recombination; energy gap; impact ionisation; ionoluminescence; photoelectron spectra; semiconductor device measurement; 0.25 micron; 1.8 eV; MOSFETs; broadband spectrum properties; electron mean free path; electron population; energy-momentum conservation; high-resolution photo-emission spectrum analysis; impact ionization; indirect band-gap recombination model; photoemission; photon emission spectrometery; photon emission spectrum profile; photon energy; photon generation dynamics; photon intensity; Charge carrier processes; Electrons; Equations; Impact ionization; Java; MOSFET circuits; Photoelectricity; Photonic band gap; Spontaneous emission; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2002. 40th Annual
Print_ISBN :
0-7803-7352-9
DOI :
10.1109/RELPHY.2002.996679
